By B. Jayant Baliga
"Advanced strength MOSFET ideas" offers an in-depth remedy of the physics of operation of complicated strength MOSFETs. Analytical versions for explaining the operation of the entire complex strength MOSFETs are constructed and defined. the result of numerical simulations are supplied to provide extra perception into the machine physics and validate the analytical types. the result of two-dimensional simulations also are given, so that it will corroborate the analytical versions and provides extra perception into the machine operation. This quantity additionally: -Discusses units that may have an important effect on enhancing the potency of the voltage-regulator-modules used to convey energy to microprocessors and pix chips in laptops and servers -Covers purposes in all reduce voltage circuits, in particular the automobile electronics quarter comprises numerical simulation examples to give an explanation for the working physics and validate the versions - deals broad assurance of the position of silicon carbide within the layout and constitution of strength rectifiers "Advanced strength MOSFET thoughts" is a must-read for researchers and training engineers within the strength machine industry.
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Additional resources for Advanced Power MOSFET Concepts
It is customary to analyze not only the resistance for a particular cell design but also the specific resistance for each of the components by multiplying the cell resistance with the cell area. 1) Each of the resistances within the power D-MOSFET structure is analyzed below by using the procedure described in the textbook. In the textbook, it was demonstrated that the contributions from the source contact resistance (RCS), the source resistance (RN+), and the drain contact resistance (RCD) are very small and will therefore be neglected in this and subsequent chapters.
The rate at which the power MOSFET structure can be switched between the on- and off-states is determined by the rate at which the input capacitance can be charged or discharged. In addition, the capacitance between the drain and the gate electrodes has been found to play an important role in determining the drain current and voltage transitions during the switching event. The capacitances within the power D-MOSFET structure have been analyzed in detail in the textbook . 18) where tOX and tIEOX are the thicknesses of the gate and inter-electrode oxides, respectively.
The resulting transfer characteristics are shown in Fig. 10. 6 V can be extracted at 300 and 400 K, respectively. The threshold voltage decreases by 16% when the temperature increases. The specific onresistance can be obtained from the transfer characteristics at any gate bias voltage. 2 Power D-MOSFET On-Resistance 35 30V D-MOSFET Structure Doping Concentration (cm–3) N+ P+ 1020 20 P 1018 18 N 1016 16 00 0 5 0. 50 1 00 2. 50 2. 5 0 0 ) 4. 0 0. 0 Y (μ 50 4. 0 00 5. 00 0 5 6. 0 5. Fig. 8 Doping distribution for the D-MOSFET structure 30V D-MOSFET Structure Doping Concentration (cm–3) 1020 N+ 1019 1018 LCH 1017 N P 1016 1015 2 3 4 Distance (microns) Fig.